Piezoresistance of silicon and strained Si0.9Ge0.1

Giant piezoresistance effect in silicon nanowires.

The piezoresistance effect of silicon has been widely used in mechanical sensors2–4, and is now being actively explored in order to improve the performance of silicon transistors. In fact, strain engineering is now considered to be one of the most promising strategies for developing high-performance sub10-nm silicon devices. Interesting electromechanical properties have been observed in carbon ...

Piezoresistance in p-type silicon revisited

Giant piezoresistance effects in silicon nanowires and microwires.

The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of depleted silicon nano- and microstructures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces independent of the applied stress. Importantly, this time-varying resistance manifests itself as an apparent giant PZR i...

Strained Silicon Photonics

A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, t...

Giant room-temperature piezoresistance in a metal-silicon hybrid structure.

Metal-semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor of 843, measured at room temperature, compares with a gage factor of -93 measured in the bulk homogeneous silicon. ...